Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

Autor(es)

de Andrade, Denise Maria ; Merces, Leandro ; Nawaz, Ali ; Bufon, Carlos Cesar Bof

• Tipo de documento: Artigo Científico
• Fonte: ACS APPLIED ELECTRONIC MATERIALS; v. 5, n. 6, p. 10-pg., 2023-05-24.

Resumo

Developing high-performance photosensors using prototypedevicearchitectures is essential to pushing forward developing and advancingnext-generation optoelectronic applications. This work reports anorganic phototransistor (OPT) with an ultra-short conducting channel(tens of nanometers) and outstanding photoelectric conversion efficiency.The OPT is based on a vertical organic field-effect transistor (VOFET)architecture, which utilizes a rolled-up metallic nanomembrane (NM)as the drain electrode and a photolithographically patterned (rectangular-shaped)perforated source electrode. These features expand the concept ofconventional VOFETs as the former enables the incorporation of ultra-thinactive layers and allows reliable control over gate-induced modulationof channel current. Using the engineering as abovementioned strategies,we focused on obtaining an improved device performance, studying theirfundamental operating principle, and further investigating their applicationas photosensors. The optimized devices exhibited low operating voltages(<5 V) and enhanced on/off current ratio (& SIM;10(5)). The VOFET photoresponse was characterized by measuring the electricalcharacteristics in the dark and under illumination using three differentmonochromatic light colors. Under blue light, our devices demonstratedimpressive photosensitivity (P (max) & AP;10(5)) and fast photoelectric conversion (steep light-inducedthreshold voltage shift), demonstrating that the rolled-up NM OPTshows excellent potential as a highly sensitive photodetector withlow power consumption. (AU)

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