| Autor(es): |
Ribeiro, T. A.
;
Pavanello, M. A.
;
IEEE
Número total de Autores: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC 2020); v. N/A, p. 4-pg., 2020-01-01. |
| Resumo | |
This work studies the effects of the temperature from 300K to 500K on the electrical parameters of SOI n-type junctionless nanowire transistors. The temperature influence on the threshold voltage and the effective carrier mobility were analyzed for narrow fin width. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as it major component, although there is a significant component of the ionized impurity scattering that can be identified as well. (AU) | |
| Processo FAPESP: | 16/10832-1 - Avaliação e modelagem do transporte de carga em transistores mos nanométricos para projeto de circuitos cmos |
| Beneficiário: | Thales Augusto Ribeiro |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |