Tunable properties of excitons in double monolayer semiconductor heterostructures

Autor(es)

Tenorio, Luiz G. M. ; Pereira, Teldo A. S. ; Mohseni, K. ; Frederico, T. ; Hadizadeh, M. R. ; da Costa, Diego R. ; Chaves, Andre J.

• Tipo de documento: Artigo Científico
• Fonte: PHYSICAL REVIEW B; v. 108, n. 3, p. 13-pg., 2023-07-27.

Resumo

We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a continuum model. We systematically investigated hetero double-layer systems for TMDs with chemical compounds MX2, showing the dependence of the interand intralayer excitons binding energies as a function of the spacer width and the dielectric constant. Moreover, we discussed how the exciton energy and its wave function, which includes the effects of the changing bandgap, depend on the geometric system setup. (AU)

• Processo FAPESP: 19/07767-1 - Reações nucleares com núcleos fracamente ligados ou com estrutura de cluster, radioativos e estáveis
• Beneficiário: Leandro Romero Gasques
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 17/05660-0 - Estudos teóricos da estrutura e reações de núcleos exóticos e sistemas de muitos corpos
• Beneficiário: Brett Vern Carlson
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• Processo FAPESP: 22/08086-0 - Polaritons, excitons e trions em heteroestruturas de van der Waals
• Beneficiário: André Jorge Carvalho Chaves
• Modalidade de apoio: Auxílio à Pesquisa - Regular