Autor(es)

Vieira, Douglas Henrique ; Nogueira, Gabriel Leonardo ; Merces, Leandro ; Bufon, Carlos Cesar Bof ; Alves, Neri

• Tipo de documento: Artigo Científico
• Fonte: ADVANCED ELECTRONIC MATERIALS; v. 10, n. 6, p. 12-pg., 2024-01-20.

Resumo

Proposals for new architectures that shorten the length of the transistor channel without the need for high-end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte-gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte-gated vertical field-effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray-pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current-voltage relationship arising from space-charge-limited current (SCLC), whereas its capacitor cell provided the field-effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray-pyrolyzed ZnO-based transistors, paving the way for future nano- and optoelectronic applications. ZnO-based transistors have been fabricated in an innovative configuration combining vertical architecture with electrolyte usage. The diode counterpart reveals a current-voltage relationship arising from space-charge limited current, while its capacitor counterpart plays the role in charge accumulation. Beyond the transport mechanism, the findings demonstrate excellence in their application, showcasing current switching based on irradiance-a phenomenon analogous to the field effect.image (AU)

• Processo FAPESP: 20/12282-4 - Desenvolvimento de transistores verticais de efeito de campo com eletrólito no gate para fotodetectores UV
• Beneficiário: Douglas Henrique Vieira
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 18/18136-0 - Nanodispositivos híbridos: transporte magnetoeletrônico e desenvolvimento de sensores baseados em moléculas/nanomembranas
• Beneficiário: Leandro das Mercês Silva
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 22/12332-7 - Dispositivos eletrônicos impressos para uma eletrônica sustentável
• Beneficiário: Neri Alves
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 17/02317-2 - Interfaces em materiais: propriedades eletrônicas, magnéticas, estruturais e de transporte
• Beneficiário: Adalberto Fazzio
• Modalidade de apoio: Auxílio à Pesquisa - Temático