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Revealing localized excitons in WSe2/β-Ga2O3

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Cavalini, Camila ; Rabahi, Cesar ; de Brito, Caique S. ; Lee, Eunji ; Toledo, Jose R. ; Cazetta, Felipe F. ; de Oliveira, Raphael B. Fernandes ; Andrade, Marcelo B. ; Henini, Mohamed ; Zhang, Yuhao ; Kim, Jeongyong ; Barcelos, Ingrid D. ; Gobato, Yara Galvao
Número total de Autores: 13
Tipo de documento: Artigo Científico
Fonte: Applied Physics Letters; v. 124, n. 14, p. 7-pg., 2024-04-01.
Resumo

We have investigated the optical and magneto-optical properties of monolayer (ML) WSe2 on flakes of beta-Ga2O3 under high magnetic fields. Remarkably, sharp emission peaks were observed and associated with localized excitons related to point defects. A detailed study of low-temperature photoluminescence (PL) and magneto-PL under high perpendicular magnetic field up to 9 T was carried out. Several sharp emission peaks have shown valley g-factors values close to -4, which is an unusual result for localized excitons in WSe2. Furthermore, some PL peaks have shown higher g-factor values of approximate to-7 and approximate to-12, which were associated with the hybridization of strain localized dark excitons and defects. The reported results suggest that beta-Ga2O3 is, indeed, a promising dielectric substrate for ML WSe2 and also to explore fundamental physics in view of possible applications in quantum information technology. (AU)

Processo FAPESP: 22/08329-0 - Efeito do padrão de Moiré nas propriedades físicas de heteroestruturas de van der Waals
Beneficiário:Yara Galvão Gobato
Modalidade de apoio: Auxílio à Pesquisa - Regular
Processo FAPESP: 23/11265-7 - Efeito do padrão Moiré nas propriedades físicas de heteroestruturas de van der Waals
Beneficiário:José Roberto de Toledo
Modalidade de apoio: Bolsas no Brasil - Programa Fixação de Jovens Doutores