From Memory Traces to Surface Chemistry: Decoding REDOX Reactions

Autor(es)

Silva, Ana Luiza Costa ; Silva, Rafael Schio Wengenroth ; Moises, Lucas Augusto ; Chiquito, Adenilson Jose ; de Godoy, Marcio Peron Franco ; Hartmann, Fabian ; Lopez-Richard, Victor

• Tipo de documento: Artigo Científico
• Fonte: ACS APPLIED ELECTRONIC MATERIALS; v. 7, n. 4, p. 9-pg., 2025-02-17.

Resumo

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nanoscaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, these allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors. (AU)

• Processo FAPESP: 23/17490-2 - Influência de efeitos externos nas propriedades de memória resistiva de filmes de óxidos metálicos semicondutores
• Beneficiário: Ana Luiza Costa Silva
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 23/05436-3 - Emersão de memória em sistemas não-lineares e nanodispositivos
• Beneficiário: Rafael Schio Wengenroth Silva
• Modalidade de apoio: Bolsas no Brasil - Doutorado