Revealing Quantitative 3D Chemical Arrangement on Ge-Si Nanostructures

Autor(es)

Montoro, Luciano A. ^[1] ; Leite, Marina S. ^[1] ; Biggemann, Daniel ^[1] ; Peternella, Fellipe G. ^[1] ; Batenburg, K. Joost ^[2] ; Medeiros-Ribeiro, Gilberto ^{[1, 3]} ; Ramirez, Antonio J. ^[1]

Afiliação do(s) autor(es)

^[1] Brazilian Synchrotron Light Lab, BR-13083970 Campinas, SP - Brazil

^[2] Univ Antwerp, B-2610 Antwerp - Belgium

^[3] Hewlett Packard Labs, Palo Alto, CA 94303 - USA

• Tipo de documento: Artigo Científico
• Fonte: Journal of Physical Chemistry C; v. 113, n. 21, p. 9018-9022, MAY 28 2009.
• Citações Web of Science: 15

Resumo

The knowledge of composition and strain with atomic resolution is of utmost importance for the understanding of the chemical and electronic properties of alloyed nanostructures, and they can only be extracted in a self-consistent fashion. As an example, several works have addressed the issue of strain and chemical composition on self-assembled epitaxial islands using different techniques such as X-ray diffraction, scanning probe microscopy and transmission electron microscopy (TEM). However, limited information is available on the 3D chemical composition of such nanostructures. Here, we demonstrate the use of a quantitative high-resolution transmission electron microscopy (QHRTEM) technique to obtain two-dimensional (2D) projected chemical maps of epitaxially grown Ge-Si/Si(001) islands, with high spatial resolution, at different crystallographic orientations. Combining these data with iterative simulation, the reconstruction of the three-dimensional (3D) chemical arrangement on the strained Ge-Si/Si(001) islands was realized. This methodology can be applied for a large variety of strained crystalline systems, such as nanowires, epitaxial islands, quantum dots and wells, and partially relaxed heterostructures. (AU)

• Processo FAPESP: 07/05165-7 - Microscopia eletrônica de transmissão quantitativa (QHRTEM): desenvolvimentos e aplicação no estudo de um material semicondutor nanoestruturado
• Beneficiário: Luciano Andrey Montoro
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado