Polymeric precursor method to the synthesis of XWO4 (X = Ca and Sr) thin films-Structural, microstructural and spectroscopic investigations

Autor(es)

Pontes, F. M. ^[1] ; Galhiane, M. S. ^[1] ; Santos, L. S. ^[1] ; Petit, L. A. ^[1] ; Kataoka, F. P. ^[1] ; Mabuchi, G. H. ^[1] ; Longo, E. ^[2] ; Zampieri, M. ^[3] ; Pizani, P. S. ^[4]

Afiliação do(s) autor(es)

^[1] Univ Estadual Paulista, LAMAC, Dept Chem, BR-17033360 Sao Paulo - Brazil

^[2] Univ Estadual Paulista, Inst Chem, BR-14801970 Sao Paulo - Brazil

^[3] Univ Fed Sao Carlos, LIEC, CMDMC, Dept Chem, BR-13565905 Sao Paulo - Brazil

^[4] Univ Fed Sao Carlos, Dept Phys, BR-13565905 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Alloys and Compounds; v. 477, n. 1-2, p. 608-615, MAY 27 2009.
• Citações Web of Science: 11

Resumo

Stoichiometric XWO(4) (X = Ca, and Sr) thin films were synthesized using the polymeric precursor method. In this soft chemical method, soluble precursors such as strontium carbonate, calcium carbonate and tungstic acid, as starting materials, were mixed in an aqueous solution. Through the polyesterification reaction, evidences of the formation of the W-citrate complex and the strontium were obtained by (13)C NMR and FT-Raman spectroscopy. The thin films were deposited on silicon and platinum-coated silicon substrates through the spinning technique. The surface morphology and crystal structure of the thin films were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), specular reflectance infrared Fourier transform spectroscopy, and micro-Raman spectroscopy. Nucleation stages and surface morphology evolution of the thin films on silicon substrates were studied by atomic force microscopy. X-ray diffraction characterization of these films showed that the XWO(4) (X = Ca, and Sr) thin film phases crystallize at 500 degrees C from an inorganic amorphous phase, given that no intermediate crystalline phase was identified. (C) 2008 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 08/53513-7 - Memorias semicondutoras ferroeletricas: desenvolvimento e caracterizacao via experimentos eletrico e de transporte
• Beneficiário: Fenelon Martinho Lima Pontes
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 06/53926-4 - Crescimento e cristalizacao de filmes finos ceramicos nanoestruturados
• Beneficiário: Fenelon Martinho Lima Pontes
• Modalidade de apoio: Auxílio à Pesquisa - Regular