| Texto completo | |
| Autor(es): |
Leite, Marina S.
[1]
;
Kamins, Theodore I.
[2]
;
Williams, R. Stanley
[3]
;
Medeiros-Ribeiro, Gilberto
[1, 3]
Número total de Autores: 4
|
| Afiliação do(s) autor(es): | [1] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP - Brazil
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 - USA
[3] Hewlett Packard Labs, Palo Alto, CA 94304 - USA
Número total de Afiliações: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Physical Chemistry C; v. 116, n. 1, p. 901-907, JAN 12 2012. |
| Citações Web of Science: | 5 |
| Resumo | |
Ostwald ripening is an interesting phenomenon that takes place in a variety of systems in nature, including nanostructured materials. A large number of nanoscale systems are formed by a mixture, which has to be considered for a realistic description of its evolution upon equilibrium. Here, a thermodynamic-based model is used to explain the intermixing contribution to Ostwald ripening phenomenon in a two-components system (A(x)B(1-x)). By considering the mixing entropy on the general growth rate equation of particles, ripening is maximized for an alloy with x = 0.5. As an example, Ge-Si incoherently strained epitaxial islands were analyzed. A selective chemical etching was used to reveal the complex effect of intermixing in islands' final composition profile. Alloying was found to take place primarily through surface diffusion, as revealed by the etching experiments. (AU) | |
| Processo FAPESP: | 03/09374-9 - Crescimento de sistemas nanoestruturados epitaxiais autoformados: propriedades estruturais. |
| Beneficiário: | Marina Soares Leite |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |