Red shift and higher photoluminescence emission of CCTO thin films undergoing pressure treatment

Autor(es)

Sequinel, T. ^[1] ; Garcia, I. G. ^[1] ; Tebcherani, S. M. ^[2] ; Kubaski, E. T. ^[3] ; Oliveira, L. H. ^[1] ; Siu Li, M. ^[4] ; Longo, E. ^[1] ; Varela, J. A. ^[1]

Afiliação do(s) autor(es)

^[1] UNESP, Inst Quim, BR-14800900 Araraquara, SP - Brazil

^[2] UTFPR, Dept Prod Engn, BR-84016210 Ponta Grossa, PR - Brazil

^[3] Itajara Minerios Ltda, BR-84010050 Ponta Grossa, PR - Brazil

^[4] Univ Sao Paulo, Inst Fis, BR-13566590 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Alloys and Compounds; v. 583, p. 488-491, JAN 15 2014.
• Citações Web of Science: 7

Resumo

CCTO thin films were deposited on Pt(111)/Ti/SiO2/Si substrates using a chemical (polymeric precursor) and pressure method. Pressure effects on CCTO thin films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and optical properties which revealed that a pressure film (PF) is denser and more homogeneous than a chemical film (CF). Pressure also causes a decrease in the band gap and an increase in the photoluminescence (PL) emission of CCTO films which suggests that the pressure facilitates the displacement of Ti in the titanate clusters and the charge transference from TiO6 to {[}TiO5V0z], {[}TiO5V0z] to {[}CaO11V0z] and {[}TiO5V0z] to {[}CuO4](x). (C) 2013 Elsevier B. V. All rights reserved. (AU)

• Processo FAPESP: 09/11099-2 - Preparação e caracterização de filmes finos de CaCu3Ti4O12 à alta pressão em substrato de silício com diferentes eletrodos
• Beneficiário: Thiago Sequinel
• Linha de fomento: Bolsas no Brasil - Doutorado
• Processo FAPESP: 98/14324-0 - Multidisciplinary Center for Development of Ceramic Materials
• Beneficiário: Elson Longo da Silva
• Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs