Intraband absorption in GaAs-(Ga,Al) As variably spaced semiconductor superlattices under crossed electric and magnetic fields

Autor(es)

Reyes-Gomez, E. ^[1] ; Raigoza, N. ^[1] ; Oliveira, L. E. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Medellin - Colombia

^[2] Univ Estadual Campinas UNICAMP, Inst Fis, BR-13083859 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: EPL; v. 104, n. 4 NOV 2013.
• Citações Web of Science: 2

Resumo

A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices. Copyright (C) EPLA, 2013 (AU)

• Processo FAPESP: 12/51691-0 - A física de novos materiais e nanoestruturas semicondutoras
• Beneficiário: Luiz Eduardo Moreira Carvalho de Oliveira
• Modalidade de apoio: Auxílio à Pesquisa - Temático