| Full text | |
| Author(s): |
Total Authors: 3
|
| Affiliation: | [1] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Medellin - Colombia
[2] Univ Estadual Campinas UNICAMP, Inst Fis, BR-13083859 Campinas, SP - Brazil
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | EPL; v. 104, n. 4 NOV 2013. |
| Web of Science Citations: | 2 |
| Abstract | |
A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices. Copyright (C) EPLA, 2013 (AU) | |
| FAPESP's process: | 12/51691-0 - The physics of new materials and semiconductor nanostructures |
| Grantee: | Luiz Eduardo Moreira Carvalho de Oliveira |
| Support Opportunities: | Research Projects - Thematic Grants |