Excitonic wavefunction engineering based on type II quantum dots

Autor(es)

Dacal, Luis C. O. ^[1] ; Iikawa, F. ^[2] ; Brasil, M. J. S. P. ^[2]

Afiliação do(s) autor(es)

^[1] Inst Estudos Avancados IEAv CTA, BR-12228970 Sao Jose Dos Campos, SP - Brazil

^[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS; v. 250, n. 10, p. 2174-2179, OCT 2013.
• Citações Web of Science: 0

Resumo

We propose a semiconductor heterostructure that allows an effective control of the shape of the carriers wavefunctions by varying just one main structural parameter. The structure is formed by a type II quantum dot and a type I quantum well. We present the results of calculations for a particular system consisting of an InP/GaAs quantum dot and an InGaAs/GaAs quantum well using a simple effective mass model that provides a good insight on our structure. We show that the wavefunction of the carrier that remains outside the dot changes from a spheroidal to a ring-like shape depending mainly on the separation between the well and the dot layers. This change has a significant impact on relevant excitonic properties such as its lifetime and electrical dipole, and it also determines the possibility of observing the optical Aharonov-Bohm effect. (C) 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim (AU)

• Processo FAPESP: 06/03934-0 - Estados excitonicos em nanoestruturas semicondutoras tipo ii.
• Beneficiário: Luis Carlos Ogando Dacal
• Modalidade de apoio: Auxílio à Pesquisa - Regular