Advanced search
Start date
Betweenand
Related content
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Excitonic wavefunction engineering based on type II quantum dots

Full text
Author(s):
Dacal, Luis C. O. [1] ; Iikawa, F. [2] ; Brasil, M. J. S. P. [2]
Total Authors: 3
Affiliation:
[1] Inst Estudos Avancados IEAv CTA, BR-12228970 Sao Jose Dos Campos, SP - Brazil
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS; v. 250, n. 10, p. 2174-2179, OCT 2013.
Web of Science Citations: 0
Abstract

We propose a semiconductor heterostructure that allows an effective control of the shape of the carriers wavefunctions by varying just one main structural parameter. The structure is formed by a type II quantum dot and a type I quantum well. We present the results of calculations for a particular system consisting of an InP/GaAs quantum dot and an InGaAs/GaAs quantum well using a simple effective mass model that provides a good insight on our structure. We show that the wavefunction of the carrier that remains outside the dot changes from a spheroidal to a ring-like shape depending mainly on the separation between the well and the dot layers. This change has a significant impact on relevant excitonic properties such as its lifetime and electrical dipole, and it also determines the possibility of observing the optical Aharonov-Bohm effect. (C) 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim (AU)