Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices

Autor(es)

Galeti, H. V. A. ^[1] ; Bezerra, A. T. ^[2] ; Galvao Gobato, Y. ^[2] ; Brasil, M. J. S. P. ^[3] ; Taylor, D. ^[4] ; Henini, M. ^[4]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Elect Engn, BR-13560 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Phys, BR-13560 Sao Carlos, SP - Brazil

^[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, Campinas, SP - Brazil

^[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 46, n. 50 DEC 18 2013.
• Citações Web of Science: 1

Resumo

In this work, we have investigated the spin polarization from two-dimensional hole gases (2DHG) formed in p-i-p GaAs/AlAs resonant tunnelling diodes (RTDs) under magnetic field parallel to the tunnel current. We have observed that the polarization degree from the quantum well (QW) and the 2DHG formed at the accumulation layer is highly voltage and light sensitive and exhibits a clear sign inversion. Our results indicate that the voltage dependence of the QW polarization degree is mainly due to an efficient hole-resonant tunnelling process through spin states of the QW. On the other hand, the voltage dependence of the 2DHG polarization degree seems to be dependent on the hole density which is controlled by the applied voltage across the RTDs. (AU)

• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular