Nanostructured thin films based on TiO2 and/or SiC for use in photoelectrochemical cells: A review of the material characteristics, synthesis and recent applications

Autor(es)

Pessoa, R. S. ^{[1, 2]} ; Fraga, M. A. ^{[1, 3]} ; Santos, L. V. ^{[1, 2]} ; Massi, M. ^{[1, 4]} ; Maciel, H. S. ^{[1, 2]}

Afiliação do(s) autor(es)

^[1] ITA DCTA, BR-12228900 Sao Jose Dos Campos, SP - Brazil

^[2] Univ Paraiba Valley Univap, IP&D, BR-12244000 Sao Jose Dos Campos, SP - Brazil

^[3] Fac Technol Sao Paulo, BR-01124060 Sao Paulo, SP - Brazil

^[4] Univ Fed Sao Paulo, ICT, BR-12231280 Sao Jose Dos Campos, SP - Brazil

• Tipo de documento: Artigo de Revisão
• Fonte: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 29, p. 56-68, JAN 2015.
• Citações Web of Science: 39

Resumo

In solar energy harvesting research, there is growing interest in the study of photoelectrochemical (PEC) properties of the following classes of semiconductor materials: metal oxides and silicon-based compounds. The motivation is that such materials are being successfully used as photoelectrode in PEC cells. Special attention has been given to the wide band gap materials. This review discusses, from the material science perspective, the recent literature relating to two wide band gap semiconductor materials: one metal oxide, titanium dioxide (TiO2), and one silicon-based compound, silicon carbide (SiC). Emphasis is placed on TiO2 and SiC thin films for PEC applications. Materials characteristics, synthesis methods and recent photocatalytic applications are presented. Finally, the interesting effect of the efficiency increase of PEC devices developed from a heterojunction of TiO2 and SiC is discussed. (C) 2014 Elsevier Ltd. All rights reserved. (AU)

• Processo FAPESP: 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas
• Beneficiário: Ricardo Magnus Osório Galvão
• Modalidade de apoio: Auxílio à Pesquisa - Temático