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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Texto completo
Autor(es):
Angelico, Joao C. [1] ; Pereira, Andre L. J. [2] ; de Arruda, Larisa B. [1] ; Dias da Silva, Jose H. [1]
Número total de Autores: 4
Afiliação do(s) autor(es):
[1] Univ Estadual Paulista, UNESP, BR-17033360 Bauru, SP - Brazil
[2] ITA, BR-12228900 Sao Jose Dos Campos, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: Journal of Alloys and Compounds; v. 630, p. 78-83, MAY 5 2015.
Citações Web of Science: 2
Resumo

The mechanisms of electrical conductivity in hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs (0.000 <= x <= 0.081) films were analyzed, first from a macroscopic perspective, followed by microscopic analysis to investigate the energy levels for trapping electric charges. The analysis of the current-voltage and resistivity-temperature characteristics allowed the development of a model based on the morphology and structure of the films. This model takes into account the main aspects of the transport above 300 K. Space charge limited current (SCLC) mechanism was observed in Mn-free films and is associated with deep trap states located at 0.10 and 0.22 eV below the conduction band. In samples containing Mn, the dark conductivity is highly dependent on the presence of hydrogen. This effect was related to the grain boundaries and interstitial regions of the films, in which the density of gap states is expected to be reduced by the presence of hydrogen. (C) 2015 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 05/02249-0 - Controle dos parâmetros de deposição de filmes hetero-epitaxiais de GaN e Ga(1-x)Mn(x)N preparados por RF magnetron sputtering
Beneficiário:Jose Humberto Dias da Silva
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 12/21147-7 - Crescimento de filmes e nanofios de GaN usando epitaxia por Magnetron Sputtering (MSE)
Beneficiário:Jose Humberto Dias da Silva
Linha de fomento: Auxílio à Pesquisa - Regular