Direct evidence of strain transfer for InAs island growth on compliant Si substrates

Autor(es)

Marcal, L. A. B. ^[1] ; Richard, M. -I. ^{[2, 3]} ; Magalhaes-Paniago, R. ^[1] ; Cavallo, F. ^{[4, 5]} ; Lagally, M. G. ^[4] ; Schmidt, O. G. ^[6] ; Schuelli, T. Ue. ^[2] ; Deneke, Ch. ^[7] ; Malachias, Angelo ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Minas Gerais, BR-31270901 Belo Horizonte, MG - Brazil

^[2] European Synchrotron ESRF, F-38043 Grenoble 9 - France

^[3] Aix Marseille Univ, IM2NP, CNRS, Fac Sci St Jerome, F-13397 Marseille - France

^[4] Univ Wisconsin, Madison, WI 53706 - USA

^[5] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 - USA

^[6] IFW Dresden, Inst Integrat Nanosci, D-01171 Dresden - Germany

^[7] CNPEM, Lab Nacl Nanotecnol LNNano, BR-13083970 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 106, n. 15 APR 13 2015.
• Citações Web of Science: 2

Resumo

Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 x 700 nm(2) can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film. (c) 2015 AIP Publishing LLC. (AU)

• Processo FAPESP: 11/22945-1 - Crescimento epitaxial sobre membranas semicondutoras auto-suportadas
• Beneficiário: Christoph Friedrich Deneke
• Modalidade de apoio: Auxílio à Pesquisa - Regular