Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4

Autor(es)

de Herval, L. K. S. ^[1] ; Arslanlar, Y. Tuncer ^[2] ; Ayvacikli, M. ^[2] ; Iikawa, F. ^[3] ; Nobrega, J. A. ^[1] ; Pizani, P. S. ^[1] ; Galvao Gobato, Y. ^[1] ; Can, N. ^{[4, 2]} ; Henini, M. ^[5] ; de Godoy, M. P. F. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos UFSCAR, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[2] Celal Bayar Univ, Fac Arts & Sci, Dept Phys, TR-45010 Muradiye Manisa - Turkey

^[3] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[4] Jazan Univ, Dept Phys, Jazan 45142 - Saudi Arabia

^[5] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England

• Tipo de documento: Artigo Científico
• Fonte: Journal of Luminescence; v. 163, p. 17-20, JUL 2015.
• Citações Web of Science: 6

Resumo

Structural and optical properties of erbium- and manganese-doped strontium aluminates (SrAl2O4) phosphor materials synthesized by a solid state reaction were investigated. The samples presented the fundamental optical transitions due to Er3+ and Mn2+ which are typical features of the well-diluted doping process. A significant enhancement of the Er3+ optical emission band at 1530 nm was observed when the matrix is co-doped with Mn. Photoluminescence intensity under ultraviolet excitation was three times larger as compared to samples without Mn content. A model of energy transfer mechanism from Mn2+ to Er3+ ions due to optical energy matching is proposed to explain the experimental results. This result, presented first time, can be applied as useful tool for developments in optical communications. (C) 2015 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 13/17657-2 - Síntese e propriedades ópticas de sistemas semicondutores para aplicação em spintrônica
• Beneficiário: Marcio Peron Franco de Godoy
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular