A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE

Autor(es):Mostrar menos -

Gunes, M. ^[1] ; Erken, O. ^[2] ; Gumus, C. ^[3] ; Yalaz, E. ^[1] ; Pesen, E. ^[1] ; Ukelge, M. O. ^[1] ; Arpapay, B. ^[4] ; Serincan, U. ^[4] ; Daday, M. Taykurt ^[1] ; Gobato, Y. Galvao ^[5] ; Henini, M. ^[6]

Afiliação do(s) autor(es)

^[1] Adana Sci & Technol Univ, Dept Mat Engn, Engn & Nat Sci Fac, Adana - Turkey

^[2] Adiyaman Univ, Dept Phys, Fac Sci & Letters, Adiyaman - Turkey

^[3] Cukurova Univ, Dept Phys, Adana - Turkey

^[4] Anadolu Univ, Dept Phys, Nanoboyut Res Lab, Fac Sci, Eskisehir - Turkey

^[5] Univ Fed Sao Carlos, Dept Fis, Sao Paulo - Brazil

^[6] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England

• Tipo de documento: Artigo Científico
• Fonte: PHILOSOPHICAL MAGAZINE; v. 96, n. 3, p. 223-229, JAN 22 2016.
• Citações Web of Science: 2

Resumo

Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose-Einstein Approximation to determine Debye temperature (beta), (Theta(E)) and thermal expansion coefficient (alpha), the exciton-phonon coupling strength (a(B)). (AU)

• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular