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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

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Autor(es):
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Lei, Sidong [1] ; Wang, Xifan [1] ; Li, Bo [1] ; Kang, Jiahao [2] ; He, Yongmin [1, 3] ; George, Antony [1] ; Ge, Liehui [1] ; Gong, Yongji [1] ; Dong, Pei [1] ; Jin, Zehua [1] ; Brunetto, Gustavo [1, 4] ; Chen, Weibing [1] ; Lin, Zuan-Tao [5] ; Baines, Robert [1] ; Galvao, Douglas S. [4] ; Lou, Jun [1] ; Barrera, Enrique [1] ; Banerjee, Kaustav [2] ; Vajtai, Robert [1] ; Ajayan, Pulickel [1]
Número total de Autores: 20
Afiliação do(s) autor(es):
[1] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 - USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 - USA
[3] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu - Peoples R China
[4] Univ Estadual Campinas, Dept Appl Phys, BR-13083959 Campinas, SP - Brazil
[5] Univ Houston, Dept Biomed Engn, Houston, TX 77004 - USA
Número total de Afiliações: 5
Tipo de documento: Artigo Científico
Fonte: NATURE NANOTECHNOLOGY; v. 11, n. 5, p. 465+, MAY 2016.
Citações Web of Science: 57
Resumo

Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type {[}Ti4+ (n)(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device. (AU)

Processo FAPESP: 13/08293-7 - CECC - Centro de Engenharia e Ciências Computacionais
Beneficiário:Munir Salomao Skaf
Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs