Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Autor(es):Mostrar menos -

Maier, P. ; Hartmann, F. ; Dias, M. Rebello Sousa ; Emmerling, M. ; Schneider, C. ; Castelano, L. K. ; Kamp, M. ; Marques, G. E. ; Lopez-Richard, V. ; Worschech, L. ; Hoefling, S.

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 109, n. 2 JUL 11 2016.
• Citações Web of Science: 8

Resumo

We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories. Published by AIP Publishing. (AU)

• Processo FAPESP: 14/02112-3 - Fenômenos ópticos e de transporte em nano-dispositivos
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 15/10765-0 - 17th International Conference on II-VI Compounds and Related Materials
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior