Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Autor(es)

Érica Pereira da Silva ^[1] ; Michel Chaves ^[2] ; Steven Frederick Durrant ^[3] ; Paulo Noronha Lisboa-Filho ^[4] ; José Roberto Ribeiro Bortoleto ^[5]

Afiliação do(s) autor(es)

^[1] São Paulo State University. Technological Plasmas Laboratory - Brasil

^[2] São Paulo State University. Technological Plasmas Laboratory - Brasil

^[3] São Paulo State University. Technological Plasmas Laboratory - Brasil

^[4] São Paulo State University - Brasil

^[5] São Paulo State University. Technological Plasmas Laboratory - Brasil

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 17, n. 6, p. 1384-1390, 2014-12-00.

Resumo

In this work, the surface and electrical characteristics ZnO:Al thin films deposited by RF magnetron sputtering onto glass substrates have been investigated. Analysis of surface morphologies revealed two growth stages. In the first stage, up to thicknesses of 100 nm, the films show surface structures with a granular form without preferential orientation. Beyond thicknesses of 100 nm, however, the grain structures increase in size and height, producing a pyramidal form and preferred orientation along the c-axis. The XRD results show that the films have a preferred orientation in the (002) plane. Furthermore, with the evolution of the film thickness the electrical resistivity decreases to a minimum of 1.6 × 10- 3 Ω cm for the film of 465 nm thickness. The doping with aluminum atoms produces an increase in concentration of charge carriers to around 8.8 × 10(19) cm- 3. All films exhibit high optical transmittance (above 85%) in the visible region. (AU)

• Processo FAPESP: 11/21345-0 - Filmes finos de carbono amorfo hidrogenado contendo também halogênios fabricados por deposição à vapor química assistido por plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID)
• Beneficiário: Steven Frederick Durrant
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 08/53311-5 - Síntese e integração de nanoestruturas, filmes finos e superfícies modificadas
• Beneficiário: José Roberto Ribeiro Bortoleto
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores