Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

Autor(es)

Boratto, Miguel H. ; Ramos, Jr., Roberto A. ; Congiu, Mirko ; Graeff, Carlos F. O. ; Scalvi, Luis V. A.

• Tipo de documento: Artigo Científico
• Fonte: Applied Surface Science; v. 410, p. 278-281, JUL 15 2017.
• Citações Web of Science: 10

Resumo

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 x 10(2) in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 10(2) under applied square wave voltage. (C) 2017 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 16/17302-8 - Fabricação de memórias ReRAM a base de filmes finos de CuxS e COS
• Beneficiário: Mirko Congiu
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado