| Texto completo | |
| Autor(es): |
Orsi Gordo, V.
;
Galvo Gobato, Y.
;
Galeti, H. V. A.
;
Brasil, M. J. S. P.
;
Taylor, D.
;
Henini, M.
Número total de Autores: 6
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOURNAL OF ELECTRONIC MATERIALS; v. 46, n. 7, p. 3851-3856, JUL 2017. |
| Citações Web of Science: | 2 |
| Resumo | |
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs' PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs. (AU) | |
| Processo FAPESP: | 16/07239-7 - 33rd International Conference on the Physics of Semiconductors |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Reunião - Exterior |
| Processo FAPESP: | 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |