| Full text | |
| Author(s): |
Orsi Gordo, V.
;
Galvo Gobato, Y.
;
Galeti, H. V. A.
;
Brasil, M. J. S. P.
;
Taylor, D.
;
Henini, M.
Total Authors: 6
|
| Document type: | Journal article |
| Source: | JOURNAL OF ELECTRONIC MATERIALS; v. 46, n. 7, p. 3851-3856, JUL 2017. |
| Web of Science Citations: | 2 |
| Abstract | |
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs' PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs. (AU) | |
| FAPESP's process: | 16/07239-7 - 33rd International Conference on the Physics of Semiconductors |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Research Grants - Meeting - Abroad |
| FAPESP's process: | 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Regular Research Grants |