Spin of carriers in semiconductor structures investigated by optical techniques

• Grant number: 11/20985-6
• Support Opportunities: Regular Research Grants
• Start date: February 01, 2012
• End date: July 31, 2014
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Maria José Santos Pompeu Brasil
• Grantee: Maria José Santos Pompeu Brasil
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

We are going to investigate spin effects on semiconductor structures using optical spectroscopy techniques. We intend to contribute to the understanding of this major issue, for the point of view of both fundamental and applied physics for the development of novel devices. We propose to work on two distinct systems: magnetic semiconductors and tunneling structures. In the first system, we are going to work maily with differet GaAs:Mn structures, but we are also going to study other materials such as PbEuTe films and ZnO samples doped with Co, Ni and Fe. The main points of interest are the spin relaxation time, the interaction between carriers and magnetic ions, and the energy levels created by the magnetic impurities on the semiconductor electronic structure. In the second system, we are going to investigate spin effects on various resonant tunneling diodes (RTDS) based on III-V semiconductors. This project is a continuity of the investigation we have been developing for several years on RTDs. On previous works we demonstrated that the spin polarization of the carriers can be varied by changing the applied bias voltage on such structures, including the possibility of a inverting the polarization signal of the carriers accumulated at the quantum well. Our present focus is to investigate the spin dynamics by time- and polarization- resolved optical measurements.The samples for this project are going to be grown by several collaborators. The project also includes the contribution of researchers from my group and from other universities for measurements and analysis of the results. (AU)

Scientific publications

(5)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

BALANTA, M. A. G.; BRASIL, M. J. S. P.; IIKAWA, F.; BRUM, J. A.; MENDES, UDSON C.; DANILOV, YU. A.; DOROKHIN, M. V.; VIKHROVA, OLGA V.; ZVONKOV, BORIS N.. Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well. Journal of Applied Physics, v. 116, n. 20, NOV 28 2014. (11/20985-6, 10/11393-5)

BALANTA, M. A. G.; BRASIL, M. J. S. P.; IIKAWA, F.; MENDES, UDSON C.; BRUM, J. A.; DANILOV, YU. A.; DOROKHIN, M. V.; VIKHROVA, O. V.; ZVONKOV, B. N.. Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures. SCIENTIFIC REPORTS, v. 6, APR 15 2016. (11/20985-6, 10/11393-5)

AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5, AUG 7 2014. (11/20985-6, 12/24055-6)

GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M.. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16, APR 25 2014. (11/20985-6, 12/24055-6)

BALANTA, M. A. G.; BRASIL, M. J. S. P.; IIKAWA, F.; MENDES, U. C.; BRUM, J. A.; MAIALLE, M. Z.; DANILOV, YU A.; VIKHROVA, O. V.; ZVONKOV, B. N.. Compensation effect on the CW spin-polarization degree of Mn-based structures. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 21, MAY 29 2013. (11/20985-6)