Optical, electrical and spin properties of semiconductor nanostructures and nanodevices

• Grant number: 12/24055-6
• Support type: Regular Research Grants
• Duration: August 01, 2013 - January 31, 2016
• Field of knowledge: Physical Sciences and Mathematics - Physics
• Principal Investigator: Yara Galvão Gobato
• Grantee: Yara Galvão Gobato
• Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Assoc. researchers: Helder Vinícius Avanço Galeti ; Marcio Peron Franco de Godoy ; Maria José Santos Pompeu Brasil

Abstract

We are going to investigate optical, transport and spin properties of semicondutor nanostructures and nanodevices. We intend to contribute to the understanding of physical properties for the point of view of both fundamental and applied physics for the development of novel semiconductor materials and devices. We propose to work on the following systems: Resonant Tunneling Diodes, InGaAsN/GaAs nanostructures and devices, GaBiAs layers and GaBoAs/GaAs nanostructures and magnetic oxides. (AU)

Scientific publications

(18)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; GALETI, H. V. A.; HENINI, M.; GALVAO GOBATO, Y.; GUINA, M. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8 AUG 2018. Web of Science Citations: 0.

GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, MAR 2018. Web of Science Citations: 0.

GUNES, MUSTAFA; GUMUS, CEBRAIL; GOBATO, YARA GALVAO; HENINI, MOHAMED. Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes. BULLETIN OF MATERIALS SCIENCE, v. 40, n. 7, p. 1355-1359, DEC 2017. Web of Science Citations: 0.

ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, JUL 2017. Web of Science Citations: 1.

AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; ABD EL-SADEK, MAHMMOUD S.; HENINI, MOHAMED. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, MAR 25 2017. Web of Science Citations: 6.

BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, FEB 2017. Web of Science Citations: 2.

BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; GALVAO GOBATO, Y. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35 SEP 7 2016. Web of Science Citations: 7.

RODRIGUES, D. H.; BRASIL, M. J. S. P.; ORLITA, M.; KUNC, J.; GALETI, H. V. A.; HENINI, M.; TAYLOR, D.; GALVAO GOBATO, Y. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 16 APR 27 2016. Web of Science Citations: 0.

GUNES, M.; ERKEN, O.; GUMUS, C.; YALAZ, E.; PESEN, E.; UKELGE, M. O.; ARPAPAY, B.; SERINCAN, U.; DADAY, M. TAYKURT; GOBATO, Y. GALVAO; HENINI, M. A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE. PHILOSOPHICAL MAGAZINE, v. 96, n. 3, p. 223-229, JAN 22 2016. Web of Science Citations: 2.

ARAUJO E NOBREGA, J.; ORSI GORDO, V.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; ORLITA, M.; HENINI, M. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots. SUPERLATTICES AND MICROSTRUCTURES, v. 88, p. 574-581, DEC 2015. Web of Science Citations: 2.

DE HERVAL, L. K. S.; ARSLANLAR, Y. TUNCER; AYVACIKLI, M.; IIKAWA, F.; NOBREGA, J. A.; PIZANI, P. S.; GALVAO GOBATO, Y.; CAN, N.; HENINI, M.; DE GODOY, M. P. F. Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4. Journal of Luminescence, v. 163, p. 17-20, JUL 2015. Web of Science Citations: 6.

GORDO, V. ORSI; ARSLANLI, Y. TUNCER; CANIMOGLU, A.; AYVACIKLI, M.; GOBATO, Y. GALVAO; HENINI, M.; CAN, N. Visible to infrared low temperature luminescence Er3+, Nd3+ and Sm3+ in CaSnO3 phosphors. Applied Radiation and Isotopes, v. 99, p. 69-76, MAY 2015. Web of Science Citations: 10.

LOPES-OLIVEIRA, V.; HERVAL, L. K. S.; ORSI GORDO, V.; CESAR, D. F.; DE GODOY, M. P. F.; GALVAO GOBATO, Y.; HENINI, M.; KHATAB, A.; SADEGHI, M.; WANG, S.; SCHMIDBAUER, M. Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response. Journal of Applied Physics, v. 116, n. 23 DEC 21 2014. Web of Science Citations: 5.

AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5 AUG 7 2014. Web of Science Citations: 0.

GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16 APR 25 2014. Web of Science Citations: 1.

CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7 FEB 19 2014. Web of Science Citations: 9.

LEMINE, O. M.; ALKAOUD, A.; AVANCO GALETI, H. V.; GORDO, V. ORSI; GOBATO, Y. GALVAO; BOUZID, HOUCINE; HAJRY, A.; HENINI, M. Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy. SUPERLATTICES AND MICROSTRUCTURES, v. 65, p. 48-55, JAN 2014. Web of Science Citations: 14.

GALETI, H. V. A.; BEZERRA, A. T.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M. Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 50 DEC 18 2013. Web of Science Citations: 1.