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Optical, electrical and spin properties of semiconductor nanostructures and nanodevices


We are going to investigate optical, transport and spin properties of semicondutor nanostructures and nanodevices. We intend to contribute to the understanding of physical properties for the point of view of both fundamental and applied physics for the development of novel semiconductor materials and devices. We propose to work on the following systems: Resonant Tunneling Diodes, InGaAsN/GaAs nanostructures and devices, GaBiAs layers and GaBoAs/GaAs nanostructures and magnetic oxides. (AU)

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Scientific publications (18)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, . (16/07239-7, 12/24055-6)
BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, . (14/50513-7, 12/24055-6)
AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; et al. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, . (16/10668-7, 12/24055-6)
BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, . (12/24055-6, 16/07239-7, 14/50513-7)
LOPES-OLIVEIRA, V.; HERVAL, L. K. S.; ORSI GORDO, V.; CESAR, D. F.; DE GODOY, M. P. F.; GALVAO GOBATO, Y.; HENINI, M.; KHATAB, A.; SADEGHI, M.; WANG, S.; et al. Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response. Journal of Applied Physics, v. 116, n. 23, . (12/24055-6, 12/02655-1, 13/17657-2, 11/17944-6)
LEMINE, O. M.; ALKAOUD, A.; AVANCO GALETI, H. V.; GORDO, V. ORSI; GOBATO, Y. GALVAO; BOUZID, HOUCINE; HAJRY, A.; HENINI, M.. Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy. SUPERLATTICES AND MICROSTRUCTURES, v. 65, p. 48-55, . (12/24055-6)
CARVALHO, A. R. H.; GORDO, V. ORSI; GALETI, H. V. A.; GOBATO, Y. GALVAO; DE GODOY, M. P. F.; KUDRAWIEC, R.; LEMINE, O. M.; HENINI, M.. Magneto-optical properties of GaBiAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 7, . (12/24055-6)
GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, . (12/24055-6, 16/10668-7)
PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; et al. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, . (16/10668-7, 14/50513-7, 12/24055-6)
GUNES, MUSTAFA; GUMUS, CEBRAIL; GOBATO, YARA GALVAO; HENINI, MOHAMED. Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes. BULLETIN OF MATERIALS SCIENCE, v. 40, n. 7, p. 1355-1359, . (12/24055-6)
RODRIGUES, D. H.; BRASIL, M. J. S. P.; ORLITA, M.; KUNC, J.; GALETI, H. V. A.; HENINI, M.; TAYLOR, D.; GALVAO GOBATO, Y.. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 16, . (14/50513-7, 12/24055-6)
DE HERVAL, L. K. S.; ARSLANLAR, Y. TUNCER; AYVACIKLI, M.; IIKAWA, F.; NOBREGA, J. A.; PIZANI, P. S.; GALVAO GOBATO, Y.; CAN, N.; HENINI, M.; DE GODOY, M. P. F.. Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4. Journal of Luminescence, v. 163, p. 17-20, . (12/24055-6, 13/17657-2)
GUNES, M.; ERKEN, O.; GUMUS, C.; YALAZ, E.; PESEN, E.; UKELGE, M. O.; ARPAPAY, B.; SERINCAN, U.; DADAY, M. TAYKURT; GOBATO, Y. GALVAO; et al. A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE. PHILOSOPHICAL MAGAZINE, v. 96, n. 3, p. 223-229, . (12/24055-6)
GORDO, V. ORSI; ARSLANLI, Y. TUNCER; CANIMOGLU, A.; AYVACIKLI, M.; GOBATO, Y. GALVAO; HENINI, M.; CAN, N.. Visible to infrared low temperature luminescence Er3+, Nd3+ and Sm3+ in CaSnO3 phosphors. Applied Radiation and Isotopes, v. 99, p. 69-76, . (12/24055-6, 13/17657-2)
ARAUJO E NOBREGA, J.; ORSI GORDO, V.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; ORLITA, M.; HENINI, M.. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots. SUPERLATTICES AND MICROSTRUCTURES, v. 88, p. 574-581, . (12/24055-6)
AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5, . (11/20985-6, 12/24055-6)
GALETI, H. V. A.; BEZERRA, A. T.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 50, . (12/24055-6)
GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M.. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16, . (11/20985-6, 12/24055-6)

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