Low-energy ion irradiation in HiPIMS to enable anataseTiO(2) selective growth

Autor(es)

Cemin, Felipe ^[1] ; Tsukamoto, Makoto ^[2] ; Keraudy, Julien ^[3] ; Antunes, Vinicius Gabriel ^[4] ; Helmersson, Ulf ^[3] ; Alvarez, Fernando ^[4] ; Minea, Tiberiu ^[1] ; Lundin, Daniel ^[1]

Afiliação do(s) autor(es)

^[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Unite Mixte Rech 8578, LPGP, F-91405 Orsay - France

^[2] Tokyo Metropolitan Univ, Grad Sch Syst Design, Div Intelligent Mech Syst, Tokyo 1910065 - Japan

^[3] Linkoping Univ, IFM Mat Phys, Plasma & Coatings Phys Div, SE-58183 Linkoping - Sweden

^[4] Univ Estadual Campinas, IFGW, BR-13083970 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 51, n. 23 JUN 13 2018.
• Citações Web of Science: 4

Resumo

High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile Ti-O2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiOx compounds, while in compound mode they are well-crystallized and present only O2- ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of similar to 1 A cm(-2) and deposition temperatures lower than 300 degrees C. Rutile is favored at lower pressures (< 1 Pa) and higher peak current densities (>2 A cm(-2)), while amorphous films are obtained at higher pressures (greater than or similar to 5 Pa). Microstructural characterization of selected films is also presented. (AU)

• Processo FAPESP: 12/10127-5 - Pesquisa e desenvolvimento de materiais nanoestruturados para aplicações eletrônicas e de física de superfícies
• Beneficiário: Fernando Alvarez
• Modalidade de apoio: Auxílio à Pesquisa - Temático