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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites

Texto completo
Autor(es):
Feres, Flavio H. [1] ; Santos, Lucas Fugikawa [2, 1] ; Gozzi, Giovani [1]
Número total de Autores: 3
Afiliação do(s) autor(es):
[1] Univ Estadual Paulista UNESP, Dept Fis, Ave 24A, 1515, BR-13506900 Rio Claro, SP - Brazil
[2] Univ Estadual Paulista UNESP, Dept Fis, Rua Cristovao Colombo 2265, BR-15054000 Sao Jose Do Rio Preto, SP - Brazil
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: MRS ADVANCES; v. 3, n. 33, p. 1883-1889, 2018.
Citações Web of Science: 1
Resumo

In the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene):polystyrene sulfonate, PEDOT:PSS), an inorganic electroluminescent material (manganese doped zinc orthosilicate, Zn2SiO4:Mn) and an organosilicon material (3-glicidoxypropyltrimethoxysilane, GPTMS), manufactured at different weight ratios of the component materials. The devices were obtained by depositing the active layer by drop-casting onto ITO-coated (RF-sputtering) glass substrates and thermally evaporating gold top electrodes in high vacuum. The results show that 90 wt% Zn2SiO4:Mn is required to observe high electroluminescence from the fabricated devices and that the optimum performance (turn-on voltage of 33 V, luminous efficacy of 24 cd/A and maximum luminance of almost 2000 cd/m(2)) was achieve for a (9.5/0.5/90) (GPTMS/PEDOT: PSS/Zn2SiO4:Mn) weight ratio. The device turn-on voltage found to be as proportional to the thickness of the active layer, indicating that the electroluminescence occurs by a field-effect mechanism. The temperature variation in the 100-300 K range allowed us to develop a theoretical model for the device operation, where the charge carrier transport in the active layer is well described by the variable range hopping model, with luminous efficacy nearby independent of the temperature. (AU)

Processo FAPESP: 15/25069-9 - Fabricação e caracterização de dispositivos eletroluminescentes produzidos com compósitos
Beneficiário:Flávio Henrique Feres
Modalidade de apoio: Bolsas no Brasil - Iniciação Científica
Processo FAPESP: 17/22018-0 - 2017 MRS Fall Meeting and Exhibit
Beneficiário:Lucas Fugikawa Santos
Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior
Processo FAPESP: 08/57706-4 - Instituto Nacional de Eletrônica Orgânica (INEO)
Beneficiário:Roberto Mendonça Faria
Modalidade de apoio: Auxílio à Pesquisa - Temático