Direct preparation of standard functional interfaces in oxide heterostructures for 2DEG analysis through beam-induced platinum contacts

Autor(es)

Amoresi, Rafael A. C. ^[1] ; Cichetto Jr, Leonelio ; Kundu, Swarup ^[1] ; Teodoro, Marcio D. ^[2] ; Marques, Gilmer E. ^[2] ; Longo, Elson ^[3] ; Andres, Juan ^[4] ; Chiquito, Adenilson J. ^[2] ; Zaghete, Maria A. ^[1]

Afiliação do(s) autor(es)

^[1] Sao Paulo State Univ UNESP, Chem Inst, LIEC, BR-14800060 Araraquara, SP - Brazil

^[2] Univ Fed Sao Carlos UFScar, Dept Phys, BR-13565905 Sao Carlos, SP - Brazil

^[3] Cichetto Jr, Jr., Leonelio, Univ Fed Selo Carlos UFSCAR, Dept Chem, LIEC, BR-13565905 Sao Carlos, SP - Brazil

^[4] Cichetto Jr, Jr., Leonelio, Univ Jaume 1, Dept Analyt & Phys Chem, Castellon de La Plana 12071 - Spain

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 113, n. 13 SEP 24 2018.
• Citações Web of Science: 0

Resumo

Two-dimensional electron gas (2DEG) in SrTiO3/LaAlO3 heterostructures has been extensively studied in the last few years; however, little attention has been given to a practical way to contact electrically the low dimensional gas at the interface. This work demonstrates a method to contact the 2DEG formed at the oxide interfaces connected by platinum electrodes which were made by the decomposition of organometallic gas using focused ion beams. On the surface, the electrodes were defined through photolithography, and at the interface, the electrodes were deposited through the focused ion beams and electrons, which were then evaluated. The quality of the interface electrodes was evaluated at two different partial oxygen pressures (pO(2)) used for the film deposition: low (10(-4) mbar) and high (10(-1) mbar). The electrode deposition conditions using electrons or ions have resulted in different rates of metal deposition and interaction with the interface leading to either metallic (2DEG) or insulating behavior. Published by AIP Publishing. (AU)

• Processo FAPESP: 17/13024-6 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
• Beneficiário: Swarup Kundu
• Linha de fomento: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 14/01371-5 - Obtenção de memórias com LaNiO3 e LaNiO3/BaTiO3 utilizando PLD
• Beneficiário: Leonélio Cichetto Junior
• Linha de fomento: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 17/23663-6 - Irradiação por laser de femtossegundos em filmes finos de LaNiO3 depositados por PLD para estudo das propriedades estruturais e físicas para aplicação em memórias ferroelétricas
• Beneficiário: Leonélio Cichetto Junior
• Linha de fomento: Bolsas no Exterior - Estágio de Pesquisa - Pós-Doutorado