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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

A global model study of low pressure high density CF4 discharge

Texto completo
Autor(es):
Toneli, D. A. [1] ; Pessoa, R. S. [2] ; Roberto, M. [2] ; Gudmundsson, J. T. [3, 4]
Número total de Autores: 4
Afiliação do(s) autor(es):
[1] Univ Fed Sao Paulo, Dept Sci & Technol, BR-12231280 Sao Jose Dos Campos - Brazil
[2] Technol Inst Aeronaut, Dept Phys, BR-12228900 Sao Jose Dos Campos - Brazil
[3] Univ Iceland, Sci Inst, Dunhaga 3, IS-107 Reykjavik - Iceland
[4] KTH Royal Inst Technol, Sch Elect Engn & Comp Sci, Dept Space & Plasma Phys, SE-10044 Stockholm - Sweden
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: PLASMA SOURCES SCIENCE & TECHNOLOGY; v. 28, n. 2 FEB 2019.
Citações Web of Science: 1
Resumo

We present a revised reaction set for low pressure high density CF4 plasma modelling. A global model (volume averaged) was developed to study a CF4 discharge that includes the neutral species CF4, CF3, CF2, CF, F-2, F, and C, the metastable states CF(a(4)Sigma(-) ) and CF2(B-3(1)), the positive ions CF3+, CF2+, CF+, CF2+, F+ and C+, the negative ions CF3-, F-2(-), and F- and electrons. The main reactions that contribute to the production and loss of each species are pointed out with an emphasis on the radicals CF2, CF and F, the dominant positive ion CF3+, and the dominant negative ion F-. We find wall processes to have a significant influence on the discharge. The density of F-2 is high due to recombination of F atoms at the walls and the losses of the radicals F, CF, and CF3 are mainly through wall recombination. As the pressure is increased, F- becomes the dominant negative charged species. The discharge is found to be weakly electronegative below similar to 10 mTorr and the electronegativity decreases with increased absorbed power. (AU)

Processo FAPESP: 18/01265-1 - Síntese e análise microbiológica de substratos poliméricos recobertos com filmes ultra-finos de TiO2 e/ou Al2O3 pela tecnologia de deposição por camada atômica
Beneficiário:Rodrigo Savio Pessoa
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 15/16471-8 - Aplicações de plasmas em fusão controlada e modelagem em plasmas frios
Beneficiário:Marisa Roberto
Linha de fomento: Auxílio à Pesquisa - Regular