Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media

Autor(es):Mostrar menos -

De Oliveira Silval, Gabriel Vinicius ^{[1, 2]} ; Subramanian, Arunprabaharan ^[3] ; Meng, Xiang ^[2] ; Zhang, Shiming ^[3] ; Barbosa, Martin S. ^{[2, 4]} ; Baloukas, Bill ^[2] ; Chartrand, Daniel ^[5] ; Gonzales, Juan C. ^[1] ; Orlandi, Marcelo Ornaghi ^[4] ; Soavi, Francesca ^[6] ; Cicoira, Fabio ^[3] ; Santato, Clara ^[2]

Afiliação do(s) autor(es)

^[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil

^[2] Polytech Montreal, Dept Genie Phys, CP 6079, Succ Ctr Ville, Montreal, PQ H3C 3A7 - Canada

^[3] Polytech Montreal, Dept Genie Chim, CP 6079, Succ Ctr Ville, Montreal, PQ H3C 3A7 - Canada

^[4] Univ Estadual Paulista, Dept Fis Quim, Rua Prof Degni 55, BR-14800060 Araraquara - Brazil

^[5] Univ Montreal, Dept Chim, CP 6128, Succ Ctr Ville, Montreal, PQ H3C 3J7 - Canada

^[6] Univ Bologna, Dipartimento Chim Giacomo Ciamician, Via Selmi 2, I-40126 Bologna - Italy

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 52, n. 30 JUL 24 2019.
• Citações Web of Science: 1

Resumo

Ion-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5-1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5-2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications. (AU)

• Processo FAPESP: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
• Beneficiário: Marcelo Ornaghi Orlandi
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/09033-7 - Transistores de contato de eletrólito baseado em filmes de WO3
• Beneficiário: Martin Schwellberger Barbosa
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
• Processo FAPESP: 14/27079-9 - Transistores de contato por eletrólito baseado em filmes finos de WO3: influência da morfologia e estrutura dos filmes na performance dos dispositivos
• Beneficiário: Martin Schwellberger Barbosa
• Modalidade de apoio: Bolsas no Brasil - Doutorado