Differential capacitive response of poly (3-hexylthiophene) diodes and effects of air exposure

Autor(es)

da Cunha, Mariana Richelle P. ^[1] ; Maciel, Alexandre C. ^[2] ; Faria, Roberto M. ^[1] ; da Cunha, Helder N. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP - Brazil

^[2] Univ Fed Piaui, Dept Phys, Campus Univ Minist Petronio Portela, BR-64049550 Teresina, PI - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Synthetic Metals; v. 253, p. 141-145, JUL 2019.
• Citações Web of Science: 0

Resumo

The origin of capacitance peaks in C-V measurements often observed in organic thin-film diodes is still waiting for a definitive explanation. It has been reported that one of two-peak C-V detected in p-doped material based devices are caused by involuntary doping, while the second one is attributed to trapped carriers. In this study, we show a ITO/P3HT/Al diode exhibiting one C-V peak at approximately 0.48 V, in both non-exposed and air-exposed devices. The second peak, (around 1.5 V) arises when the device is exposed to air, and increases significantly with exposure time. We suggest that the second peak is originated by a volumetric p-doping of P3HT due to the action of oxygen and the formation of electrons deep traps. A simple model to explain the C-V experiments is presented and is in agreement with this hypothesis. (AU)

• Processo FAPESP: 14/50869-6 - INCT 2014: em Eletrônica Orgânica INEO
• Beneficiário: Roberto Mendonça Faria
• Modalidade de apoio: Auxílio à Pesquisa - Temático