| Texto completo | |
| Autor(es): |
do Amaral, Gabriela Moura
[1]
;
Tonon, Isabela da Costa
[1]
;
Pena Roman, Ricardo Javier
[1]
;
Plath, Hannah de Oliveira
[1]
;
Taniguchi, Theo Massao
[1]
;
de Lima, Luis Henrique
[2]
;
Zagonel, Luiz Fernando
[1]
;
Landers, Richard
[1]
;
de Siervo, Abner
[1]
Número total de Autores: 9
|
| Afiliação do(s) autor(es): | [1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Fed ABC, Ctr Ciencias Nat & Humans, BR-09210580 Santo Andre, SP - Brazil
Número total de Afiliações: 2
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Applied Surface Science; v. 538, FEB 1 2021. |
| Citações Web of Science: | 0 |
| Resumo | |
The plethora of new transition metal dichalcogenides (TMDs) materials have attracted a major attention during the last years due to a diversity of new possibilities of applications in different areas from electronic and photonic devices to new sensors and catalysts, as well as a large playground of 2D materials to explore new physical phenomena. Many efforts have been done to develop new growth techniques that can produce single-layer TMDs in large areas and with high quality (low density of defects). Another important issue for electronic device integration is how to perform electrical contacts that show a metallic behavior instead semiconductor junctions. In this work, we have systematically studied the epitaxial growth of MoS2 on Ag(111) using the physical vapor deposition method (PVD). The results, based on a multiple technique approach, demonstrate that is possible to produce a single-layer 1H -MoS2 film on Ag(111). The material presents a metallic behavior due to an electronic hybridization between the MoS2 states and the Ag(111) states as results of the strong TMD-substrate interaction at the interface. This metallic character is preserved even after exposure to atmosphere and hostile oxidation environment which indicates that silver is probably an excellent candidate to perform metal contacts on sulfur-based TMDs. (AU) | |
| Processo FAPESP: | 07/54829-5 - Estrutura eletrônica e geométrica de nano materiais: um estudo por radiação sincroton |
| Beneficiário: | Richard Landers |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |
| Processo FAPESP: | 18/08543-7 - Emissão de luz por defeitos em materiais bidimensionais |
| Beneficiário: | Ricardo Javier Peña Román |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |
| Processo FAPESP: | 16/21402-8 - Crescimento e caracterização de heteroestruturas bidimensionais: dicalcogenetos de metais de transição sobre grafeno e nitreto de boro hexagonal |
| Beneficiário: | Luis Henrique de Lima |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |
| Processo FAPESP: | 07/08244-5 - Estudo das propriedades magnéticas de filmes ultrafinos e nanopartículas de Pd e PdAu via XMCD |
| Beneficiário: | Abner de Siervo |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |