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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO3 films

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Autor(es):
Gonzalez-Abreu, Y. [1, 2] ; Reis, S. P. [3] ; Freitas, F. E. [2, 4] ; Eiras, J. A. [5] ; Araujo, E. B. [2]
Número total de Autores: 5
Afiliação do(s) autor(es):
[1] Univ La Habana, Fac Fis, Havana 10400 - Cuba
[2] Sao Paulo State Univ, Dept Phys & Chem, BR-15385000 Ilha Soheira - Brazil
[3] Fed Inst Educ Sci & Technol Sao Paulo, BR-15503110 Votuporanga - Brazil
[4] Univ Rio Verde UniRV, BR-75901970 Rio Verde - Brazil
[5] Univ Fed Sao Carlos, Dept Fis, Grp Mat Ferro, Sao Carlos - Brazil
Número total de Afiliações: 5
Tipo de documento: Artigo Científico
Fonte: JOURNAL OF ADVANCED DIELECTRICS; v. 11, n. 03 JUN 2021.
Citações Web of Science: 0
Resumo

BiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties have been investigated. These properties included dielectric permittivity, electric modulus, electrical conductivity measurements as a function of the temperature (300-525 K) and frequency (10(2)-10(6) Hz), and leakage current measurements electric field range +/- 30 kV/cm at room temperature. The differences observed in conductivity and current density of the BiFeO3 films were discussed in terms of possible defects induced by the crystallization kinetic. An anomalous relaxor-like dielectric behavior characterized by a broad maximum in the real dielectric permittivity as a function of temperature and the low-frequency dielectric dispersion has been observed. The nonexpected peaks in the real permittivity were accompanied by increasing at least four orders in the conductivity's magnitude at high temperatures. The origin of the relaxor-like dielectric anomalies is discussed, suggesting that the dielectric permittivity peaks are artifacts due to carrier migration correlated to the onset of the Maxwell-Wagner effect. (AU)

Processo FAPESP: 17/13769-1 - Materiais multiferróicos e ferroelétricos para conversores de energia: síntese, propriedades, fenomenologia e aplicações
Beneficiário:José Antonio Eiras
Modalidade de apoio: Auxílio à Pesquisa - Temático