| Texto completo | |
| Autor(es): |
Silveira Costa Lopes, Juliana Feletto
[1]
;
Furquim, Felipe de Oliveira
[1]
;
Rangel, Elidiane Cipriano
[1]
;
Durrant, Steven F.
[1]
Número total de Autores: 4
|
| Afiliação do(s) autor(es): | [1] Univ Estadual Paulista Julio de Mesquita Filho UN, Inst Ciencia & Tecnol, Sorocaba, SP - Brazil
Número total de Afiliações: 1
|
| Tipo de documento: | Artigo Científico |
| Fonte: | MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 24, n. 1 2021. |
| Citações Web of Science: | 0 |
| Resumo | |
Thin a-C:H:Si:F:N films were studied as a function of the partial pressure of SF6 in plasma feed, RSF, together with tetramethylsilane and N-2. Deposition rates varied from similar to 4 to similar to 19 nm.min-1. Surface roughnesses were typically less than 35 nm. Surface contact angles with water droplets, measured using goniometry, were all around 90 degrees. Scanning electron micrography revealed surface particles, probably formed in the gas phase, of typical diameters similar to 8 mu m. As revealed by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy, the films are plasma polymers with a carbon and silicon network. Most of the films contain similar to 60 at.% C, similar to 10 at.% Si, 20 at.% O and similar to 5 to 14 at.% N. Film doping with F rises to similar to 2 at.% as RSF is increased. The Tauc gap, calculated from ultraviolet-visible near infrared spectroscopic data, is controllable in the range of similar to 3.5 to 4.1 eV by a suitable choice of R-SF. Fluorination causes the films to be softer and less stiff. Total deformation and stored energies are reduced compared to those of the film deposited at R-SF = 0%. The modulus of dissipation increases from similar to 8% to a maximum of similar to 65% for the fluorinated films. (AU) | |
| Processo FAPESP: | 17/15853-0 - Caracterização de Filmes Finos Complexos Obtidos por PECVD e a Deposição de Filmes Finos em Substratos Porosos |
| Beneficiário: | Steven Frederick Durrant |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |