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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

DFT studies on PbO2 and binary PbO2/SnO2 thin films

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Autor(es):
Fabris, G. S. L. [1] ; Azevedo, D. H. M. [2] ; Alves, A. C. [2] ; Paskocimas, C. A. [1] ; Sambrano, J. R. [3] ; Cordeiro, J. M. M. [2]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Univ Fed Rio Grande do Norte, Dept Mat Engn, BR-59078970 Natal, RN - Brazil
[2] Sao Paulo State Univ UNESP, Dept Phys & Chem, Sch Nat Sci & Engn, BR-15385000 Ilha Solteira - Brazil
[3] Sao Paulo State Univ, Modeling & Mol Simulat Grp, BR-17033360 Bauru, SP - Brazil
Número total de Afiliações: 3
Tipo de documento: Artigo Científico
Fonte: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; v. 136, FEB 2022.
Citações Web of Science: 0
Resumo

Periodic quantum mechanics DFT calculations have been employed to investigate surface and electronic properties of beta-PbO2 thin films and binary beta-PbO2/SnO2 thin films with crystallographic planes (001), (010), (101), and (110) in both cases. The results show significant increases in the band gap energy of the pure PbO2 films compared to that of the bulk, due to a marked increase in the minimum energy of the conduction band. The relative surface stability follows the sequence (110) > (101) > (010) > (001). The surfaces become more unstable, and with a more accentuated ionic character after coating with SnO2, however, the relative stability of the surfaces does not change. Thus, the preferential growth direction and the crystalline shape of the coated films are maintained. The SnO2 coating causes significant changes in the band gap, with increases in the films with (001) and (010) surfaces, while a decrease is noticed in the band gap energy of the films with (110) and (101) surfaces. (AU)

Processo FAPESP: 19/08928-9 - Modelagem e Simulações da Funcionalização de Nanotubos Porosos Inorgânicos
Beneficiário:Julio Ricardo Sambrano
Modalidade de apoio: Auxílio à Pesquisa - Regular