Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contac

Autor(es)

Nogueira, Gabriel L. ^[1] ; Vieira, Douglas H. ^[1] ; Morais, Rogerio M. ^[1] ; Serbena, Jose P. M. ^[2] ; Seidel, Keli F. ^[3] ; Alves, Neri ^[1]

Afiliação do(s) autor(es)

^[1] Sao Paulo State Univ UNESP, Fac Sci & Technol FCT, Dept Phys, BR-19060900 Presidente Prudente - Brazil

^[2] Univ Fed Parana UFPR, Dept Phys, BR-82590300 Curitiba, Parana - Brazil

^[3] Univ Tecnol Fed Parana UTFPR, Dept Phys, BR-80230901 Curitiba, Parana - Brazil

• Tipo de documento: Artigo Científico
• Fonte: IEEE ELECTRON DEVICE LETTERS; v. 42, n. 12, p. 1790-1793, DEC 2021.
• Citações Web of Science: 0

Resumo

Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process betweenAgNWand the top-gate electrode. Fromthe transfer curve, we extracted an I-ON/I-OFF ratio of 10(4), an on-current density of 65.3 mA/cm(2) and a normalized transconductance of 113.4 mS/cm(2). Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. (AU)

• Processo FAPESP: 20/12282-4 - Desenvolvimento de transistores verticais de efeito de campo com eletrólito no gate para fotodetectores UV
• Beneficiário: Douglas Henrique Vieira
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 18/02037-2 - Desenvolvimento de transistores verticais de efeito de campo impressos
• Beneficiário: Gabriel Leonardo Nogueira
• Modalidade de apoio: Bolsas no Brasil - Doutorado