| Full text | |
| Author(s): |
Nogueira, Gabriel L.
[1]
;
Vieira, Douglas H.
[1]
;
Morais, Rogerio M.
[1]
;
Serbena, Jose P. M.
[2]
;
Seidel, Keli F.
[3]
;
Alves, Neri
[1]
Total Authors: 6
|
| Affiliation: | [1] Sao Paulo State Univ UNESP, Fac Sci & Technol FCT, Dept Phys, BR-19060900 Presidente Prudente - Brazil
[2] Univ Fed Parana UFPR, Dept Phys, BR-82590300 Curitiba, Parana - Brazil
[3] Univ Tecnol Fed Parana UTFPR, Dept Phys, BR-80230901 Curitiba, Parana - Brazil
Total Affiliations: 3
|
| Document type: | Journal article |
| Source: | IEEE ELECTRON DEVICE LETTERS; v. 42, n. 12, p. 1790-1793, DEC 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process betweenAgNWand the top-gate electrode. Fromthe transfer curve, we extracted an I-ON/I-OFF ratio of 10(4), an on-current density of 65.3 mA/cm(2) and a normalized transconductance of 113.4 mS/cm(2). Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. (AU) | |
| FAPESP's process: | 20/12282-4 - Development of vertical electrolyte-gated field effect transistors for UV photodetectors |
| Grantee: | Douglas Henrique Vieira |
| Support Opportunities: | Scholarships in Brazil - Doctorate |
| FAPESP's process: | 18/02037-2 - Development of all-printed vertical field-effect transistor |
| Grantee: | Gabriel Leonardo Nogueira |
| Support Opportunities: | Scholarships in Brazil - Doctorate |