Role of oxygen flow rate on the structure and stoichiometry of cobalt oxide films deposited by reactive sputtering

Autor(es)

Neto, Nilton Francelosi A. ^[1] ; Stegemann, Cristiane ^[2] ; Affonco, Lucas J. ^[1] ; Leite, Douglas M. G. ^[2] ; da Silva, Jose H. D. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Estadual Paulista, Fac Ciencias, Bauru, SP - Brazil

^[2] Inst Tecnol Aeronaut, Lab Plasmas & Proc LPP, BR-12228900 Sao Jose Dos Campos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A; v. 40, n. 1 JAN 2022.
• Citações Web of Science: 0

Resumo

The influence of the oxygen gas supply on the stoichiometry, structure, and orientation texture of polycrystalline cobalt oxide films was investigated in this study. The films were grown by direct current reactive magnetron sputtering using a metallic Co target and different O-2 inlet flow rates (0.5-5.0 SCCM). The deposition power (80 W), the argon gas flow (40 SCCM), and the total working pressure (0.67 Pa) were kept constant during depositions. The results evidence a strong influence of the oxygen flow over the film's stoichiometry and structure, where low oxygen flows (< 2.0 SCCM) favor the formation of the rock salt CoO phase while higher oxygen flows (> 2.5 SCCM) favor the spinel Co3O4 phase formation. The coexistence of monoxide and tetraoxide phases is only observed for the 2.5 SCCM oxygen flow condition. Strain effects related to the oxygen partial pressure are also observed and discussed. Computer simulations of the reactive sputtering growth supported the analysis of the film properties and its correlation to the oxygen partial pressure. (AU)

• Processo FAPESP: 15/06241-5 - Produção de filmes e heteroestruturas à base de GaN pela técnica de sputtering reativo para aplicações em dispositivos SAW
• Beneficiário: Douglas Marcel Gonçalves Leite
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 17/18916-2 - Otimização do Crescimento de Filmes de Co3O4 para Aplicações Fotovoltaicas e Fotocatalíticas
• Beneficiário: Jose Humberto Dias da Silva
• Modalidade de apoio: Auxílio à Pesquisa - Regular