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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Role of oxygen flow rate on the structure and stoichiometry of cobalt oxide films deposited by reactive sputtering

Full text
Author(s):
Neto, Nilton Francelosi A. [1] ; Stegemann, Cristiane [2] ; Affonco, Lucas J. [1] ; Leite, Douglas M. G. [2] ; da Silva, Jose H. D. [1]
Total Authors: 5
Affiliation:
[1] Univ Estadual Paulista, Fac Ciencias, Bauru, SP - Brazil
[2] Inst Tecnol Aeronaut, Lab Plasmas & Proc LPP, BR-12228900 Sao Jose Dos Campos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A; v. 40, n. 1 JAN 2022.
Web of Science Citations: 0
Abstract

The influence of the oxygen gas supply on the stoichiometry, structure, and orientation texture of polycrystalline cobalt oxide films was investigated in this study. The films were grown by direct current reactive magnetron sputtering using a metallic Co target and different O-2 inlet flow rates (0.5-5.0 SCCM). The deposition power (80 W), the argon gas flow (40 SCCM), and the total working pressure (0.67 Pa) were kept constant during depositions. The results evidence a strong influence of the oxygen flow over the film's stoichiometry and structure, where low oxygen flows (< 2.0 SCCM) favor the formation of the rock salt CoO phase while higher oxygen flows (> 2.5 SCCM) favor the spinel Co3O4 phase formation. The coexistence of monoxide and tetraoxide phases is only observed for the 2.5 SCCM oxygen flow condition. Strain effects related to the oxygen partial pressure are also observed and discussed. Computer simulations of the reactive sputtering growth supported the analysis of the film properties and its correlation to the oxygen partial pressure. (AU)

FAPESP's process: 15/06241-5 - GaN based films and heteroestructures grown by reactive sputtering for SAW devices application
Grantee:Douglas Marcel Gonçalves Leite
Support Opportunities: Regular Research Grants
FAPESP's process: 17/18916-2 - Optimization of the Growth Process of Co3O4 Films for Photovoltaic and Photocatalytic Applications
Grantee:Jose Humberto Dias da Silva
Support Opportunities: Regular Research Grants