UV-Assisted Annealing Effect on the Performance of an Electrolyte-Gated Transistor Based on Inkjet Printed ZnO Nanoparticles Blended With Zinc Nitrate

Autor(es)

Morais, Rogerio Miranda ; Vieira, Douglas Henrique ; Ozorio, Maiza da Silva ; Pereira, Luis ; Martins, Rodrigo ; Alves, Neri

• Tipo de documento: Artigo Científico
• Fonte: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 69, n. 3, p. 7-pg., 2022-01-12.

Resumo

Solution-processed devices are in general compatible with flexible and conformable electronics. However, some promising materials needs to be processed at high temperatures, which limits the applications and the use of different substrates. Among these materials we can highlight zinc oxide (ZnO), a semiconductor that stands out for transistors applications and is, in general, obtained at temperatures around 300 degrees C-400 degrees C. Here, we reported the combination of annealing at 150 degrees C, ultraviolet (UV) treatment and blending of ZnO nanoparticles (ZnO-NPs) with zinc nitrate and urea as a strategy to fabricate an inkjet printed electrolyte-gated transistor (EGT) with reduced temperature and improved performance, including a significant mobility improvement to 0.21 cm(2)/V center dot s, operating below 2 V bias, which is around 460% higher than the mobility of the EGT fabricated purely with ZnO-NPs. (AU)

• Processo FAPESP: 20/12282-4 - Desenvolvimento de transistores verticais de efeito de campo com eletrólito no gate para fotodetectores UV
• Beneficiário: Douglas Henrique Vieira
• Modalidade de apoio: Bolsas no Brasil - Doutorado