Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

Autor(es)

Costa, Fernando J. ; Trevisoli, Renan ; Doria, Rodrigo T. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC); v. N/A, p. 4-pg., 2022-01-01.

Resumo

The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at -2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane. (AU)

• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular