| Texto completo | |
| Autor(es): |
Celino, Daniel R.
;
de Souza, Adelcio M.
;
Plazas, Caio L. M. P.
;
Ragi, Regiane
;
Romero, Murilo A.
;
IEEE
Número total de Autores: 6
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021); v. N/A, p. 4-pg., 2021-01-01. |
| Resumo | |
This paper presents a fully analytical physics-based model for the current-voltage (I-V) characteristics of resonant tunneling diodes. We consider the whole electrical potential distribution in the structure, including the space charge regions in the emitter and collector layers. Additionally, we account for scattering mechanisms experienced by carriers during tunneling through the double barrier region as a function of the applied bias voltage. The model is validated with experimental and numerical data, yielding excellent agreement (AU) | |
| Processo FAPESP: | 18/13537-6 - Modelagem compacta de transistores MOS baseados em efeitos quânticos |
| Beneficiário: | Adelcio Marques de Souza |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |