Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

Autor(es)

Silva, Lucas Mota Barbosa da ; Pavanello, Marcelo Antonio ; Casse, Mikael ; Barraud, Sylvain ; Vinet, Maud ; Faynot, Olivier ; de Souza, Michelly

• Tipo de documento: Artigo Científico
• Fonte: Solid-State Electronics; v. 208, p. 4-pg., 2023-10-01.

Resumo

This work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors. (AU)

• Processo FAPESP: 23/03006-1 - EUROSOI-ULIS 2023 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
• Beneficiário: Michelly de Souza
• Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior
• Processo FAPESP: 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS
• Beneficiário: Marcelo Antonio Pavanello
• Modalidade de apoio: Auxílio à Pesquisa - Regular