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Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells

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Autor(es):
Patricio, M. A. Tito ; Villegas-Lelovsky, L. ; de Oliveira, E. R. Cardozo ; Marques, G. E. ; Lapierre, R. R. ; Toropov, A. I. ; Pusep, Yu. A.
Número total de Autores: 7
Tipo de documento: Artigo Científico
Fonte: PHYSICAL REVIEW B; v. 108, n. 3, p. 9-pg., 2023-07-21.
Resumo

The influence of the valence band structure on the optical properties of quantum wells with a parabolic potential, consisting of AlxGa1-xAs and In1-xGaxAsyP1-y alloys, is studied and compared. The distribution of photogenerated carriers over the parabolic potential is found to be responsible for specific selection rules: the recombination due to only odd-indexed confined levels is observed. The reason for this is the accumulation of photogenerated holes at the center of the parabolic potential, which results in interband electron-hole recombination occurring at the center of the parabolic quantum wells. Furthermore, a specific valence band structure is found to be responsible for the magnetic-field-induced change in the photoluminescence circular polarization. In particular, at a certain magnetic field, the hybridization of the states of a heavy hole and a light hole results in the intersection of Landau levels with different spins, which leads to the observed change in the circular polarization of photoluminescence. The processes of long-term spin relaxation of heavy holes in both studied parabolic quantum wells are demonstrated, and the corresponding times are obtained. (AU)

Processo FAPESP: 22/02132-0 - Estudo de processos dinâmicos de transportadores e spin em plasma hidrodinâmico elétron-buraco formado em canais mesoscópicos de GaAs e em poços quânticos de AlGaAs e InGaAsP
Beneficiário:Iouri Poussep
Modalidade de apoio: Auxílio à Pesquisa - Regular