Autor(es)

Faria Junior, Paulo E. ; Xu, Gaofeng ; Lee, Jeongsu ; Gerhardt, Nils C. ; Sipahi, Guilherme M. ; Zutic, Igor

• Tipo de documento: Artigo Científico
• Fonte: PHYSICAL REVIEW B; v. 92, n. 7, p. 14-pg., 2015-08-25.

Resumo

Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum-well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying a uniaxial strain, it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin lasers, which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (>200 GHz) would significantly exceed the frequency range possible in conventional lasers. (AU)

• Processo FAPESP: 12/05618-0 - Dinâmicas de spin e transporte de spin em dimensões reduzidas: do grafeno aos lasers de spin
• Beneficiário: Paulo Eduardo de Faria Junior
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 13/23393-8 - Manejando propriedades óticas e dependentes de spin em nanoestruturas semicondutoras
• Beneficiário: Paulo Eduardo de Faria Junior
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
• Processo FAPESP: 11/19333-4 - Manejo de Spin e Magnetismo: Cálculos de Estrutura Eletrônica
• Beneficiário: Guilherme Matos Sipahi
• Modalidade de apoio: Bolsas no Exterior - Pesquisa