| Texto completo | |
| Autor(es): |
Mariniello, Genaro
;
Barraud, Sylvain
;
Vinet, Maud
;
Faynot, Olivier
;
Paz, Bruna Cardoso
;
Pavanello, Marcelo Antonio
;
IEEE
Número total de Autores: 7
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2020-01-01. |
| Resumo | |
This paper aims at analyzing the analog characteristics of n-type vertically stacked nanowires with 2 channels, varying the fin width and channel length. The basic electrical parameters such as threshold voltage and subthreshold slope are extracted in the linear region, whereas the transconductance, output conductance, and intrinsic voltage gain are extracted in saturation. (AU) | |
| Processo FAPESP: | 19/15500-5 - Simulação atomística das propriedades elétricas de nanofios transistores MOS |
| Beneficiário: | Marcelo Antonio Pavanello |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |