Energy-resolved spatial inhomogeneity of disordered Mott systems

Autor(es)

Andrade, E. C. ^{[1, 2, 3]} ; Miranda, E. ^[1] ; Dobrosavljevic, V. ^{[2, 3]}

Afiliação do(s) autor(es)

^[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

^[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 - USA

^[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 - USA

• Tipo de documento: Artigo Científico
• Fonte: PHYSICA B-CONDENSED MATTER; v. 404, n. 19, p. 3167-3171, OCT 15 2009.
• Citações Web of Science: 9

Resumo

We investigate the effects of weak to moderate disorder on the T = 0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous in the critical region. Remarkably, the higher energy states show the opposite behavior: they display enhanced spatial inhomogeneity precisely in the close vicinity to the Mott transition. We suggest that such energy-resolved disorder screening is a generic property of disordered Mott systems. (C) 2009 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 07/57630-5 - Métodos não perturbativos aplicados a sistemas eletrônicos correlacionados
• Beneficiário: Eduardo Miranda
• Modalidade de apoio: Auxílio à Pesquisa - Temático